出版日期：2007-12-01 00:00:00

著者：Hsu, S. C.; Pong, B. J.; Li, W. H.; Beechem, Thomas E., III; Graham, Samuel; Liu, C. Y.

單位：淡江大學化學工程與材料工程學系

出版者：American Institute of Physics

著錄名稱、卷期、頁數：Applied Physics Letters 91(25), 251114 (3 pages)

摘要：The stress state of GaN epilayers transferred onto Si substrates through a Au-Si bonding process was studied by micro-Raman scattering and photoluminescence techniques. By increasing the Au bonding thickness from 1 to 40 μm, the high compressive stress state in GaN layer was relieved. A 10 μm Au bonding layer thickness is shown to possess the maximum compressive stress relief and also the deformation potential of the quantum well was found to be ~85 meV. A nonlinear parabolic relation between luminescent bandgap and the biaxial stress of the transferred GaN epilayer in the compressive region was observed.

關鍵字：III-V semiconductors;Quantum wells;III-V semiconductors;Quantum wells;Elasticity and anelasticity;stress-strain relations;III-V;II-VI semiconductors

語言：en

ISSN：0003-6951

收錄於：SCI

出版型式：紙本