出版日期：2011-07-01 00:00:00

著者：Liu, M. C.; Cheng, Y. J.; Chang, J. R.; Hsu, S. C.; Chang, C. Y.

單位：淡江大化學工程與材料工程學系

出版者：College Park: American Institute of Physics

著錄名稱、卷期、頁數：Applied Physics Letters 99(2), 021103(3pages)

摘要：We report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.

語言：en

ISSN：0003-6951; 1077-3118

期刊性質：國外

收錄於：SCI

通訊作者：Cheng, Y. J.

國別：USA

出版型式：紙本