出版日期：2014-07-01 00:00:00

著者：Hsu, Shih-Chieh; Chen, Lo-Lin; Lin, Cheng-Lan; Lin, Dar-Jong

單位：淡江大學化學工程與材料工程學系

出版者：Dordrecht: Springer Netherlands

著錄名稱、卷期、頁數：Research on Chemical Intermediates 40(6), pp.2347-2354

摘要：We successfully fabricated a predefined patterned copper (Cu) substrate for thin GaN light-emitting diodes without barriers by the selective electroplating technique. The contours of Cu bumps fabricated using different electroplating modes and parameters were measured. We observed that the average thickness diminished with increasing current density. The current density conditions to obtain the best upright structure in the process were 40 and 80 mA/cm2.

關鍵字：Electroplating; Selective electroplating; LED; GaN Cu bump

語言：en

ISSN：0922-6168

期刊性質：國外

收錄於：SCI

通訊作者：Lin, Cheng-Lan

審稿制度：是

國別：NLD

出版型式：紙本,電子版