出版日期：2012-06-01 00:00:00

著者：Lin, H.Y.; Chen, Y.J.; Chang, C.L.; Li, X.F.; Kuo, C.H.; Hsu, S.C.; Liu, C.Y.

單位：淡江大學化學工程與材料工程學系

出版者：New York: Cambridge University Press

著錄名稱、卷期、頁數：Journal of Materials Research 27(6), pp.971-977

摘要：Chemical wet etching on c-plane sapphire wafers by three etching solutions (H3PO4, H2SO4, and H3PO4/H2SO4 mixing solution) was studied. Among these etching agents, the mixing H3PO4/H2SO4 solution has the fastest etching rate (1.5 μm/min). Interestingly, we found that H2SO4 does not etch the c-plane sapphire wafer in thickness; instead, a facet pyramidal pattern is formed on the c-plane sapphire wafer. GaN light-emitting diode (LED) epitaxial structure was grown on the sapphire wafer with the pyramidal pattern and the standard flat sapphire wafer. X-ray diffraction and photoluminescence measurement show that the pyramidal pattern on the sapphire wafer improved crystalline quality but augmented the compressive stress level in the GaN LED epilayer. The horizontal LED chips fabricated on the pyramidal-patterned sapphire wafer have a larger light output than the horizontal LED chips fabricated on the standard flat sapphire wafer by 20%.

關鍵字：III–V;Semiconducting

語言：en

ISSN：0884-2914 2044-5326

期刊性質：國外

收錄於：SCI

通訊作者：Liu, C.Y.

審稿制度：是

國別：USA

出版型式：電子版,紙本