出版日期：2013-05-01 00:00:00

著者：Lin, Bo-Wen; Wu, Nian-Jheng; Wu, Yew Chung Sermon; Hsu, S. C.

單位：淡江大學化學工程與材料工程學系

出版者：Piscataway: Institute of Electrical and Electronics Engineers

著錄名稱、卷期、頁數：Journal of Display Technology 9(5), pp.371-376

摘要：Thin-GaN light-emitting diodes were fabricated by Au-Si wafer bonding and laser lift-off. The relaxation process of the thermal strain in the transferred GaN films on a Si substrate was studied by varying the bonding film thickness of the Au over a wide range from 7 µm to 40 µm. The transferred GaN films were found to be strained by the biaxial compressive stress. A 10 µm Au bonding layer thickness was proven to have the lowest residual compressive stress, and the complete compressive stress variation throughout the entire thin-GaN fabrication process is discussed. Finally, we changed the biaxial in-plane stress of the transferred GaN thin film by controlling the bonding conditions, including the bonding layer thickness and the bonding temperature.

語言：en_US

ISSN：1551-319X 1558-9323

期刊性質：國外

收錄於：SCI

審稿制度：是

國別：USA

出版型式：電子版,紙本,