出版日期：2014-03-14 00:00:00

著者：Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen

單位：淡江大學化學工程與材料工程學系

出版者：Japan: Japan Society of Applied Physics

著錄名稱、卷期、頁數：Applied Physics Express 7(4), 042103(4 pages)

摘要：Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm−2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.

語言：en

ISSN：1882-0786

期刊性質：國外

收錄於：SCI

通訊作者：Hsu, Shih-Chieh; Lan, Yu-Pin

審稿制度：是

國別：JPN

出版型式：電子版,紙本